Monte Carlo Simulation of the Silver Sputtered Atoms Transport Process
Abstract
The simulation of the phenomenons in the sputtering system is necessary in the design optimization. Facing targets sputtering systems are currently being used in various specialities of the nanotechnology. Study the sputtering process and the deposition parameters are important, the direction and energy of the particles at the substrate are the relation with the transport of particles in sputtering system. We present the study on the sputtering process and film deposition with the Monte Carlo method. We followed the trajectory of each sputtered atom separately in the three-dimensional coordinates with the calculation of the scattering angle and if a collision took place the energy loss. With this method we calculate the flux of the atoms at the substrate, direction and energy of each atom. The influences of the geometries of the system and the gas pressure were investigated.
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